echivalent tranzistor
echivalent tranzistor
ce echivalent ar merge cel mai bine la tranzistorul KSP 2907A? si un echivalent la tranzistorul smd W2F . Multumesc.
Re: echivalent tranzistor
petru KSP 2907A cauta datasheet-ul pe net si introduci datele aici: http://www.elbase.eu/echivalente-tranzi ... ustom.html ....vei obtine multe echivalente
in ce priveste celelalt, habar n-am.
in ce priveste celelalt, habar n-am.
Re: echivalent tranzistor
ok, toata stima.ADMIN scrie:petru KSP 2907A cauta datasheet-ul pe net si introduci datele aici: http://www.elbase.eu/echivalente-tranzi ... ustom.html ....vei obtine multe echivalente
in ce priveste celelalt, habar n-am.
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Re: echivalent tranzistor
W2F= MOSFET canal N...
Acum nu stiu pe cine sa cred, un catalog zice una, google, zice alta:
D
A
T
A
SH
EET
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
DISCRETE SEMICONDUCTORS
PMBT2907; PMBT2907A
PNP switching transistors
db
ook, halfpage
M3D088
2004 Jan 16 2
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907;
PMBT2907A
FEATURES
•
High current (max. 600
mA)
•
Low voltage (max. 60
V).
APPLICATIONS
•
Switching and linea
r amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN
complements: PMBT2222 and PMBT2222A.
MARKING
Note
1. *
=
p
:
Made in Hong Kong.
*
=
t
:
Made in Malaysia.
*
=
W:
Made in China.
PINNING
TYPE NUMBER
MARKING CODE
(1)
PMBT2907
*2B
PMBT2907A
*2F
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMBT2907
−
plastic surface mounted package; 3 leads
SOT23
PMBT2907A
−
plastic surface mounted package; 3 leads
SOT23
2004 Jan 16 3
NXP Semico
nductors
Product data sheet
PNP switching transistors PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC
60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
−
−
60
V
V
CEO
collector-emitter voltage
open base
PMBT2907
−
−
40
V
PMBT2907A
−
−
60
V
V
EBO
emitter-base voltage
open collector
−
−
5
V
I
C
collector current (DC)
−
−
600
mA
I
CM
peak collector current
−
−
800
mA
I
BM
peak base current
−
−
200
mA
P
tot
total power dissipation
T
amb
≤
25
°
C
−
250
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
T
amb
operating ambient temperature
−
65
+150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from
junction to ambient
note
1
500
K/W

D
A
T
A
SH
EET
Product data sheet
Supersedes data of 1999 Apr 27
2004 Jan 16
DISCRETE SEMICONDUCTORS
PMBT2907; PMBT2907A
PNP switching transistors
db
ook, halfpage
M3D088
2004 Jan 16 2
NXP Semiconductors
Product data sheet
PNP switching transistors
PMBT2907;
PMBT2907A
FEATURES
•
High current (max. 600
mA)
•
Low voltage (max. 60
V).
APPLICATIONS
•
Switching and linea
r amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN
complements: PMBT2222 and PMBT2222A.
MARKING
Note
1. *
=
p
:
Made in Hong Kong.
*
=
t
:
Made in Malaysia.
*
=
W:
Made in China.
PINNING
TYPE NUMBER
MARKING CODE
(1)
PMBT2907
*2B
PMBT2907A
*2F
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMBT2907
−
plastic surface mounted package; 3 leads
SOT23
PMBT2907A
−
plastic surface mounted package; 3 leads
SOT23
2004 Jan 16 3
NXP Semico
nductors
Product data sheet
PNP switching transistors PMBT2907; PMBT2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC
60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
−
−
60
V
V
CEO
collector-emitter voltage
open base
PMBT2907
−
−
40
V
PMBT2907A
−
−
60
V
V
EBO
emitter-base voltage
open collector
−
−
5
V
I
C
collector current (DC)
−
−
600
mA
I
CM
peak collector current
−
−
800
mA
I
BM
peak base current
−
−
200
mA
P
tot
total power dissipation
T
amb
≤
25
°
C
−
250
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
T
amb
operating ambient temperature
−
65
+150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from
junction to ambient
note
1
500
K/W
"In timp ce faptele sunt rigide,adevarul este flexibil."Edward A.Murphy
Re: echivalent tranzistor
nu stiu ce sa pun in loc si nici nu ma tine sa fac teste pentru ca acesta este in circuitul de comanda a integratului STR T2268 pe care l-am gasit crapat cu alte cond. si diode . Si nici nu prea am gasit mare lucru pe net despre sursa lcd LG model sursa LGP2637TD.
Re: echivalent tranzistor
poate ajuta......spune-ne si modelul tv.
- Fişiere ataşate
-
- strt2268_167.rar
- (161.42 KiB) Descărcat de 260 ori
Re: echivalent tranzistor
LG RZ-37LZ55ADMIN scrie:poate ajuta......spune-ne si modelul tv.
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Re: echivalent tranzistor
Vedeti daca nu va ajuta asta: si pe langa asta ,puteti vedea daca este tranzistor PNP daca emitorul este conectat la un + iar colectorul spre un -( bineinteles poate fi si prin rezistente.
- Fişiere ataşate
-
- LCD POWER - FEL-3237UB - STRA6151 , LA5752 , STRT2268 , FA5501AP.zip
- (210.78 KiB) Descărcat de 237 ori
"In timp ce faptele sunt rigide,adevarul este flexibil."Edward A.Murphy